Makyoh Topography for the Study of Large-Area Extended Defects in Semiconductors
نویسنده
چکیده
A quantitative approach to the Makyoh-topography image formation mechanism is presented. General relations are given on the optical settings; geometrical optical simulations of a sinusoidal surface and a hillock (or depression) are presented. Optimum working conditions are established, and general features of the imaging are pointed out. The experimental images taken for Si wafers are compared to the results of the model.
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Geometrical optical model of the image formation in Makyoh (magic-mirror) topography
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